BTS660P |
RFQ for BTS660P Required Field |
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| Technical/Catalog Information | BTS660P |
| Vendor | Infineon Technologies |
| Category | Integrated Circuits (ICs) |
| Package / Case | TO-220-7 (Bent and Staggered Leads) |
| Mounting Type | Through Hole |
| Type | High Side |
| Voltage - Supply | 5 V ~ 58 V |
| On-State Resistance | 7.2 mOhm |
| Current - Output / Channel | 44A |
| Current - Peak Output | 90A |
| Packaging | Tube |
| Input Type | Non-Inverting |
| Number of Outputs | 1 |
| Operating Temperature | -40°C ~ 150°C |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | BTS660P BTS660P BTS660PIN ND BTS660PINND BTS660PIN |
| Product | Manufacturers | Pack | D/C |
| BTS660P | - | TO-263 | 05+ |
Typical Application |
Features |
| * Power switch with current sense diagnostic feedback for up to 48 V DC grounded loads * Most suitable for loads with high inrush current like lamps and motors; all types of resistive and inductive loads * Replaces electromechanical relays, fuses and discrete circuits | * Overload protection * Current limitation * Short circuit protection * Over temperature protection * Over voltage protection (including load dump) * Clamp of negative voltage at output * Fast deenergizing of inductive loads ) * Low ohmic inverse current operation * Diagnostic feedback with load current sense * Open load detection via current sense * Loss of Vbb protection ) * Electrostatic discharge (ESD) protection |
| Parameter | Symbol | Values | Unit |
| Supply voltage (over voltage protection see page 4) | Vbb | 62 | V |
| Supply voltage for full short circuit protection, (E limitation see diagram on page 10) AS Tj,start =-40 ...+150°C: |
Vbb | 58 | V |
| Load current (short circuit current, see page 5) | IL | self-limited | A |
| Load dump protection VLoadDump = UA + Vs, UA = 13.5 V 5) RIIN = 2 , RLIS = 0.23 ?, td = 200 ms, = open or grounded |
VLoad dump6 | 80 | V |
| Operating temperature range Storage temperature range |
Tj Tstg |
-40 ...+150 -55 ...+150 |
°C |
| Power dissipation (DC), TC 25 °C | Ptot | 170 | W |
| Inductive load switch-off energy dissipation, single pulse Vbb = 12V, T j = 150°C, Tstart = 150°C const., IL = 20 A, ZL = 6 mH, 0 , see diagrams on page 10 |
EAS |
1.2 | J |
Electrostatic discharge capability (ESD) Human Body Model acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993, C = 100 pF, R = 1.5 k |
VESD | 4.0 | kV |
| Current through input pin (DC) Current through current sense status pin (DC) see internal circuit diagrams on page 7 and 8 |
IIN IIS |
+15 , -250 +15 , -250 |
mA |
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